Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

Chuanxue Sun; Xiaoyu Dou; Zhichao Du; Haitao Dong; Xiaopeng Li; Pengpeng Sang; Xuepeng Zhan; Fei Mo; Jixuan Wu; Jiezhi Chen

doi:10.3390/mi16020141

Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

Chuanxue Sun, Xiaoyu Dou, Zhichao Du, Haitao Dong, Xiaopeng Li, Pengpeng Sang, Xuepeng Zhan, Fei Mo, Jixuan Wu^*, Jiezhi Chen^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Shandong University

Research output: Contribution to journal › Article › peer-review

Abstract

This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

Original language	English
Article number	141
Journal	Micromachines
Volume	16
Issue number	2
DOIs	http://doi.org/10.3390/mi16020141
Publication status	Published - Feb 2025

Keywords

IGZO
elevated-metal metal-oxide (EMMO)
oxygen vacancies
positive bias stress (PBS)

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10.3390/mi16020141

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@article{4a863f1263ae4d4687c72589be99fe10,

title = "Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs",

abstract = "This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.",

keywords = "IGZO, elevated-metal metal-oxide (EMMO), oxygen vacancies, positive bias stress (PBS)",

author = "Chuanxue Sun and Xiaoyu Dou and Zhichao Du and Haitao Dong and Xiaopeng Li and Pengpeng Sang and Xuepeng Zhan and Fei Mo and Jixuan Wu and Jiezhi Chen",

note = "Publisher Copyright: {\textcopyright} 2025 by the authors.",

year = "2025",

month = feb,

doi = "10.3390/mi16020141",

language = "English",

volume = "16",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "2",

}

TY - JOUR

T1 - Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

AU - Sun, Chuanxue

AU - Dou, Xiaoyu

AU - Du, Zhichao

AU - Dong, Haitao

AU - Li, Xiaopeng

AU - Sang, Pengpeng

AU - Zhan, Xuepeng

AU - Mo, Fei

AU - Wu, Jixuan

AU - Chen, Jiezhi

PY - 2025/2

Y1 - 2025/2

N2 - This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

AB - This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

KW - IGZO

KW - elevated-metal metal-oxide (EMMO)

KW - oxygen vacancies

KW - positive bias stress (PBS)

UR - http://www.scopus.com/pages/publications/85218994981

U2 - 10.3390/mi16020141

DO - 10.3390/mi16020141

M3 - Article

AN - SCOPUS:85218994981

SN - 2072-666X

VL - 16

JO - Micromachines

JF - Micromachines

IS - 2

M1 - 141

ER -

Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

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Keywords

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